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NCE85H21C - N-Channel Enhancement Mode Power MOSFET

Product Overview

NCE Power Semiconductor

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NCE85H21C N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE85H21C

Datasheet Details

Part number	NCE85H21C
Manufacturer	NCE Power Semiconductor
File Size	319.70 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE85H21C Datasheet
Additional preview pages of the NCE85H21C datasheet.

Product details

Description

The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDSS =85V,ID =210A RDS(ON) < 4mΩ @ VGS=10V.
Good stability and uniformity with high EAS.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Feb 7, 2016 |