NCEP038N10GU mosfet equivalent, n-channel super trench ii power mosfet.
* VDS =100V,ID =135A RDS(ON)=3.45mΩ (Typ.) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating te.
that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other a.
The NCEP038N10GU uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) an.
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