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NCEP0114AS Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP0114AS Features

* VDS =100V,ID =14A RDS(ON)=8.8mΩ (typical) @ VGS=10V RDS(ON)=9.8mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pi

NCEP0114AS General Description

The NCEP0114AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP0114AS Datasheet (443.85 KB)

Preview of NCEP0114AS PDF

Datasheet Details

Part number:

NCEP0114AS

Manufacturer:

NCE Power Semiconductor

File Size:

443.85 KB

Description:

N-channel super trench power mosfet.

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TAGS

NCEP0114AS N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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