NCEP4065QU Datasheet | NCE Power Semiconductor

Description The NCEP4065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low General Features - VDS =40V,ID =65A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature y - Pb-free lead plating l 100% UIS TESTED! On100% ∆Vds TESTED! DFN 3.3X3.3 Use Top View times Bottom View Schematic Diagram ng Package Marking and Ordering Information e Device Marking Device Device Package Reel Size Tape width h NCEP4065QU DFN3.3X3.3-8L - - gs Absolute Maximum Ratings (TC=25℃unless otherwise noted) n Parameter Symbol Limit To Drain-Source Voltage Quantity - Unit Gate-Source Voltage r Drain Current-Continuous (TC=25℃) Fo Drain Current-Continuous(TC=100℃) ±20 ID(TC=25℃) ID (TC=100℃) Drain Current-Continuous (TA=25℃) ID(TA=25℃) Pulsed Drain Current (Note...