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NCEP4065QU - N-Channel Super Trench Power MOSFET

General Description

The NCEP4065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Key Features

  • VDS =40V,ID =65A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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Datasheet Details

Part number NCEP4065QU
Manufacturer NCE Power Semiconductor
File Size 512.00 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP4065QU Datasheet

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NCEP4065QU NCE N-Channel Super Trench Power MOSFET Description The NCEP4065QU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low General Features ● VDS =40V,ID =65A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature y ● Pb-free lead plating l 100% UIS TESTED! On100% ∆Vds TESTED! DFN 3.3X3.