NCEP40P60Q P-Channel Super Trench Power MOSFET

NCE Power Semiconductor

Description

NCEP40P60Q NCE P-Channel Super Trench Power MOSFET .
The NCEP40P60Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency. VDS =-40V.

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Datasheet Specifications

Part number: NCEP40P60Q
Manufacturer: NCE Power Semiconductor
File Size: 0.99 MB
Datasheet: NCEP40P60Q-NCEPowerSemiconductor.pdf
Description: P-Channel Super Trench Power MOSFET

Features

* uniquely optimized to provide the most efficient high frequency
* VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg

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NCEP40P60Q P-Channel Super Trench Power MOSFET NCE Power Semiconductor

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