NCEP40P60Q - P-Channel Super Trench Power MOSFET
NCEP40P60Q Features
* uniquely optimized to provide the most efficient high frequency
* VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg
