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NCEP40P60Q

P-Channel Super Trench Power MOSFET

NCEP40P60Q Features

* uniquely optimized to provide the most efficient high frequency

* VDS =-40V,ID =-60A switching performance. Both conduction and switching power RDS(ON)=8.8mΩ (typical) @ VGS=-10V losses are minimized due to an extremely low combination of RDS(ON)=12.5mΩ (typical) @ VGS=-4.5V RDS(ON) and Qg

NCEP40P60Q Datasheet (0.99 MB)

Preview of NCEP40P60Q PDF

Datasheet Details

Part number:

NCEP40P60Q

Manufacturer:

NCE Power Semiconductor

File Size:

0.99 MB

Description:

P-channel super trench power mosfet.

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NCEP40P60Q P-Channel Super Trench Power MOSFET NCE Power Semiconductor

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