NCEP40P65GU Datasheet (NCE Power Semiconductor) - P-Channel Super Trench Power MOSFET

NCEP40P65GU, P-Channel Super Trench Power MOSFET

The NCEP40P65GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switchin

NCEP40P65GU Features

* VDS =-40V,ID =-65A RDS(ON)=7.8mΩ (typical) @ VGS=-10V RDS(ON)=11.5mΩ (typical) @ VGS=-4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! DFN 5X6 Top View