NCEP40ND80G Datasheet - NCE Power Semiconductor

N-Channel Super Trench Power MOSFET

NCEP40ND80G Features

* VDS =40V,ID =80A RDS(ON)=4.3mΩ (typical) @ VGS=10V RDS(ON)=5.5mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 PiTnoApsVsieg

NCEP40ND80G General Description

The NCEP40ND80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP40ND80G Datasheet (302.89 KB)

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Datasheet Details

Part number:

NCEP40ND80G

Manufacturer:

NCE Power Semiconductor

File Size:

302.89 KB

Description:

N-channel super trench power mosfet.

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NCEP40ND80G N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP40ND80G Features

NCEP40ND80G General Description

Datasheet Details

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Description:

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