NCEP40ND80G - N-Channel Super Trench Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCEP40ND80G
Manufacturer	NCE Power Semiconductor
File Size	302.89 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP40ND80G-NCEPowerSemiconductor.pdf

NCEP40ND80G Product details

Description

The NCEP40ND80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =40V,ID =80A RDS(ON)=4.3mΩ (typical) @ VGS=10V RDS(ON)=5.5mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 PiTnoApsVsiegwnment Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package P40ND80G NCEP40ND80G DFN5x6-8L Reel Size - Tape width - Quantity - Absolute Maximum R.

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Published: Nov 19, 2024 |