NCEP40P80G mosfet equivalent, p-channel super trench power mosfet.
* VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resis.
The NCEP40P80G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..
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