NCEP40P80G Key Features
- VDS =-40V,ID =-80A RDS(ON)=6.3mΩ (typical) @ VGS=-10V RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb-free lead plating
- Part: NCEP40P80G
- Description: P-Channel Super Trench Power MOSFET
- Manufacturer: NCE Power Semiconductor
- Size: 335.81 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCEP40P60Q | P-Channel Super Trench Power MOSFET |
| NCEP40P65GU | P-Channel Super Trench Power MOSFET |
| NCEP4045GU | N-Channel Super Trench Power MOSFET |
| NCEP4060EQ | N-Channel Power MOSFET |
| NCEP4065QU | N-Channel Super Trench Power MOSFET |