2SC2721
2SC2721 is NPN Silicon Transistor manufactured by NEC.
FEATURES
- plementary transistor with 2SA1154
- High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)- PT
Tj Tstg
- PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 60 60 5.0 0.7 1.0 1 150
- 55 to +150
Unit V V V A A W °C °C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain h FE1 VCE = 1.0 V, IC = 0.1 A
- DC current gain h FE2 VCE = 1.0 V, IC = 0.5 A
- DC base voltage
VBE VCE = 6.0 V, IC = 10 m A
Collector saturation voltage VCE(sat) IC = 0.5 A, IB = 50 m A
- Base saturation voltage
VBE(sat) IC = 0.5 A, IB = 50 m A
- Output capacitance Gain bandwidth product
Cob VCB = 6.0 V, IE = 0, f = 1.0 MHz f T VCE = 6.0 V, IE =
- 10 m A
Turn-on time ton Refer to the test circuit.
Storage temperature tstg
Turn-off time toff
- Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
MIN.
90 50...
