3SK223 transistor equivalent, n-channel si dual gate mos field-effect transistor.
* The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR =
–30 dB
* Low Noise Figure:
* High Power Gain:
* En.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
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