FIELD-EFFECT Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=-

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Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e

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GENERAL DESCRIPTION GPT24N50 POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced

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MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON)

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SMD Type MOS Field Effect Transistor KPA1764 IC IC Features Dual chip type Low on-state resistance RDS(on)1 = 27 m RDS(on)2 = 32 m RDS(on)3 = 34 m T

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NIKO-SEM P-Channel Enhancement Mode PM5C3BA Field Effect Transistor SOT-23(S) Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -2

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Platin

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GPT02N70 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the a

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GENERAL DESCRIPTION GPT02N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the av

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, S

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, S

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PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products us

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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www.DataSheet4U.com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lithium Ion Battery Applications

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