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NE52118-T1 - L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT

Key Features

  • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω).
  • 4-pin super minimold package.
  • Grounded Emitter Transistor.

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Datasheet Details

Part number NE52118-T1
Manufacturer NEC
File Size 63.90 KB
Description L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
Datasheet download datasheet NE52118-T1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) • 4-pin super minimold package • Grounded Emitter Transistor ORDERING INFORMATION (PLAN) Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide. Pin 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office.