Datasheet Summary
PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
Features
- For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω)
- 4-pin super minimold package
- Grounded Emitter Transistor
ORDERING INFORMATION (PLAN)
Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide. Pin 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for...