Datasheet4U Logo Datasheet4U.com

NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – NE5520279A

Datasheet Details

Part number NE5520279A
Manufacturer NEC
File Size 166.32 KB
Description NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Datasheet download datasheet NE5520279A Datasheet
Note This datasheet PDF includes multiple part numbers: NE5520279A, NE5-5202.
Please refer to the document for exact specifications by model.
Additional preview pages of the NE5520279A datasheet.

Product details

Description

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.

Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.

Features

📁 Similar Datasheet
  • NE5520 - LVDT Signal Conditioner (Ideal Semiconductor)
  • NE5521 - LVDT signal conditioner (Philips)
  • NE5521D - LVDT signal conditioner (Philips)
  • NE5521N - LVDT signal conditioner (Philips)
  • NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET (CEL)
  • NE5512 - Dual high-performance operational amplifier (Philips)
  • NE5512D - Dual high-performance operational amplifier (Philips)
  • NE5512N - Dual high-performance operational amplifier (Philips)
Other Datasheets by NEC
  • NE5520279A-T1 - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
  • NE5520379A - 3.2V Operation Silicon RF Power LDMOS FET
  • NE5500179A - OPERATION SILICON RF POWER MOSFET
  • NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
  • NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET
  • NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET
Published: |