Datasheet4U Logo Datasheet4U.com

NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – NE5520279A

Datasheet Details

Part number NE5520279A
Manufacturer NEC
File Size 166.32 KB
Description NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Datasheet download datasheet NE5520279A Datasheet
Note This datasheet PDF includes multiple part numbers: NE5520279A, NE5-5202.
Please refer to the document for exact specifications by model.
Additional preview pages of the NE5520279A datasheet.

Product details

Description

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets 0.7-2.5 GHz FIXED WIRELESS ACCESS W-LAN SHORT RANGE WIRELESS RETAIL BUSINESS RADIO SPECIAL M

Features

📁 Similar Datasheet

  • NE5520 - LVDT Signal Conditioner (Ideal Semiconductor)
  • NE5521 - LVDT signal conditioner (Philips)
  • NE5521D - LVDT signal conditioner (Philips)
  • NE5521N - LVDT signal conditioner (Philips)
  • NE5512 - Dual high-performance operational amplifier (Philips)
  • NE5512D - Dual high-performance operational amplifier (Philips)
  • NE5512N - Dual high-performance operational amplifier (Philips)
  • NE5514 - Quad high-performance operational amplifier (Philips)
Other Datasheets by NEC
  • NE5520279A-T1 - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
  • NE5520379A - 3.2V Operation Silicon RF Power LDMOS FET
  • NE5500179A - OPERATION SILICON RF POWER MOSFET
  • NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
  • NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET
  • NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET
Published: |