NE662M16 transistor equivalent, npn silicon high frequency transistor.
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* HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: .
from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/.
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance.
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