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NE661M04 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

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NEC

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NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD by NEC - Datasheet Preview — Datasheet preview – NE661M04

Datasheet Details

Part number	NE661M04
Manufacturer	NEC
File Size	70.64 KB
Description	NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Datasheet	NE661M04 Datasheet
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Product details

Features

Low noise and high gain with low collector current.
NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA.
Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA.
fT = 25 GHz technology.
Flat-lead 4-pin thin super mini-mold (t = 0.59 mm).

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Published: May 7, 2005 |