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NE67300 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

Description

The NE673

Features

  • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND.

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Datasheet Details

Part number NE67300
Manufacturer NEC
File Size 109.51 KB
Description (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
Datasheet download datasheet NE67300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER (Triple Epitaxial Technology) • PROVEN RELIABILITY AND STABILITY • SPACE QUALIFIED 2 8 1 NFOPT 4 0 0 1 2 4 8 12 20 30 DESCRIPTION The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's gate and channel are glassivated with a thin layer of Si3N4 for mechanical protection only.
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