Datasheet Summary
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LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
Features
- VERY HIGH fMAX: 100 GHz
Optimum Noise Figure, NFOPT (dB)
NE67300 NE67383
NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
5 GA 4 16 20
- LG = 0.3 µm, WG = 280 µm
- N+ CONTACT LAYER (Triple Epitaxial Technology)
- PROVEN RELIABILITY AND STABILITY
- SPACE QUALIFIED
NFOPT
0 1 2 4 8 12 20 30
DESCRIPTION
The NE673 Features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's...