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NE67383 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

Download the NE67383 datasheet PDF. This datasheet also covers the NE67300 variant, as both devices belong to the same (ne67300 / ne67383) low noise ku-k band gaas mesfet for hi rel applications only family and are provided as variant models within a single manufacturer datasheet.

Description

The NE673

Features

  • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE67300_NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NE67383
Manufacturer NEC
File Size 109.51 KB
Description (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
Datasheet download datasheet NE67383 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER (Triple Epitaxial Technology) • PROVEN RELIABILITY AND STABILITY • SPACE QUALIFIED 2 8 1 NFOPT 4 0 0 1 2 4 8 12 20 30 DESCRIPTION The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's gate and channel are glassivated with a thin layer of Si3N4 for mechanical protection only.
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