Full PDF Text Transcription for NE699M01 (Reference)
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NE699M01. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • • • • • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW...
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AMPLIFICATION FEATURES • • • • • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 NE699M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 6 0.2 (All Leads) 5 T97 3 4 DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SO
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NE699M01 Datasheet
