* Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz ORDERING INFORMATION PART NUMBER NE76184A-SL NE76184A-T1 NE76184A-T1A SUPPLY.

0.042 0.040 0.040 0.040 0.039 0.039 0.039 0.039 0.037 0.039 0.038 Mason’s U dB 38.817 41.142 31.251 29.809 27.934 27.066.

NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVR.

NE76184AS

NE76100

NE76118

NE76000

NE76000L

NE76038

NE76084

NE76084S

NE71-0.2

NE713

NE71300

NE71300-L

NE71300-M