Datasheet Summary
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GENERAL PURPOSE L TO X-BAND GaAs MESFET
Features
- LOW NOISE FIGURE: 0.8 dB typical at 4 GHz
- HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz
- LG = 1.0 µm, WG = 400 µm
- LOW COST METAL/CERAMIC PACKAGE
- TAPE & REEL PACKAGING OPTION AVAILABLE
Optimum Noise Figure, NFOPT (dB)
4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
24 21 18 15 12 9 6 3 0 10 20
DESCRIPTION
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise...