NE76184AS mesfet equivalent, general purpose l to x-band gaas mesfet.
* LOW NOISE FIGURE: 0.8 dB typical at 4 GHz
* HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz
* LG = 1.0 µm, WG = 400 µm
* LOW COST METAL/CERAMIC PACKAGE
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
Frequency, f (GH.
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplif.
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