Datasheet4U Logo Datasheet4U.com

NE856M03 - NPN SILICON TRANSISTOR

General Description

The NE856M03 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Key Features

  • NEW M03.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER CEL
NE85619 NPN SILICON EPITAXIAL TRANSISTOR CEL
NE85619-A NPN SILICON EPITAXIAL TRANSISTOR CEL
NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR CEL
NE85630 NPN Silicon RF Transistor Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE856M13 NPN SILICON TRANSISTOR
NE856 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85600 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85618 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85619 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • TC 3 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 0.3±0.1 DESCRIPTION The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications.