* The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
* PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
* OIP3 = 31 dBm TYP. @ VCE
NESG210833 Datasheet (121.28 KB)
NESG210833
NEC
121.28 KB
Npn sige rf transistor.
DATA SHEET www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.
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