Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications..
Features
- Channel temperature 175 degree rated.
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A).
- Low input capacitance Ciss = 2400 pF TYP.
- Built-in gate protection diode (TO-262)
(TO-263)
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