NP80N055EHE Datasheet | NEC

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES - Channel temperature 175 degree rated - Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) - Low input capacitance Ciss = 2400 p F TYP. - Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14096EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan 2002, 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 55 ±20 ±80 ±200 1.8 120 175 - 55 to +175 45/31/10 2.0/96/100 V V A A W W °C °C A m J Total Power Dissipation (TA = 25°C) Total Power Dissipation...