NP80N055EHE
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R>.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2400 pF TYP.
- Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14096EJ7V0DS00 (7th edition) Date Published October 2007 NS Printed in Japan
