UPA1756
Overview
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 -0.05.
- Dual MOS FET chips in small package
- 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
- Low Ciss Ciss = 800 pF TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
- 0 ±0.3 4.4 0.8
- 8 Max.
- 05 Min.
- 5 ±0.2 0.10
- 27 0.40
