* Dual MOS FET chips in small package
* 2.5-V gate drive type and low on-resistance RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ MAX. (VGS = 2.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate .

uPA1754

UPA1755

UPA1757

UPA1758

UPA1759

UPA1700A

UPA1701A

UPA1703

UPA1704

UPA1705

UPA1706

UPA1707

UPA1708