* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
* Low Ciss: Ciss = 2010 pF TYP.

of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 13 mΩ MA.

The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) R.

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