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KSD5066 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V KSD

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Datasheet Details

Part number KSD5066
Manufacturer NJS
File Size 61.46 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5066 Datasheet
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j£i±£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V KSD5066 I2 11 <^3 PIN 1. BASE 2. COLLECTOR 3. EMITTER w1 2 : TO-3PN package c-«-~ .H K I** •*=• .
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