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KSD5068 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO

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Datasheet Details

Part number KSD5068
Manufacturer NJS
File Size 61.57 KB
Description Silicon NPN Power Transistor
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Jft 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. t One.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range 30 A 150 W 150 •c -55-150 r KSD5068 11 12 3 2 ^: PIN 1.BASE 2. COLLECTOR 3.
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