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KSD5079 - Silicon NPN Power Transistor

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO

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Datasheet Details

Part number KSD5079
Manufacturer NJS
File Size 61.31 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet KSD5079 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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J.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5079 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25-C Tj Junction Temperature 30 A 70 W 150 •c Tstg Storage Temperature Range -55-150 'C f __ o r PIN 1.BASE 2. COLLECTOR 3.