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2N6057 Datasheet, NTE

2N6057 Datasheet, NTE

2N6057

datasheet Download (Size : 65.31KB)

2N6057 Datasheet

2N6057 transistor equivalent, silicon npn transistor.

2N6057

datasheet Download (Size : 65.31KB)

2N6057 Datasheet

Features and benefits

D High DC Current Gain: hFE = 3500 Typ @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Application

Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO.

Description

The 2N6057 is a silicon NPN Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A Absolute Maximum Ratings: Collector−.

Image gallery

2N6057 Page 1 2N6057 Page 2

TAGS

2N6057
Silicon
NPN
Transistor
NTE

Manufacturer


NTE

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