D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 50V Min D High Current−Gain Bandwidth Product: fT = 10.

Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltage: VCEO(.

The 2N6109 is a silicon PNP transistor in a TO−220 type package designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A D Collector−Emitter Sustaining Voltag.

2N6100

2N6101

2N6102

2N6103

2N6104

2N6105

2N6106

2N6107

2N6108

2N6110

2N6111

2N6114

2N6115