NTE218 transistor equivalent, silicon pnp transistor.
Features: D Low Saturation Voltage
– 0.6VCE(sat) @ IC = 1A D High Gain Characteristics
– hFE @ IC = 250mA: 30
–100 D Excel.
This device features: Features: D Low Saturation Voltage
– 0.6VCE(sat) @ IC = 1A D High Gain Characteri.
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