D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Appli.

Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSWR L.

The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) D Ability to Withstand more than 20:1 VSW.

NTE340

NTE341

NTE343

NTE345

NTE346

NTE347

NTE3470

NTE348

NTE349

NTE30

NTE300

NTE3000

NTE30001