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NTE470 Silicon NPN Transistor RF Power Output
Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter–Base Voltage, VEBO . . . . .