NTE470 Datasheet, Transistor, NTE

NTE470 Features

• Transistor D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD =
    –30dB Min D 10

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Part number:

NTE470

Manufacturer:

NTE

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24.07kb

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📄 Datasheet

Description:

Silicon npn transistor. The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high  –power l

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