NTE470 transistor equivalent, silicon npn transistor.
D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD =
.
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high
–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Mini.
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