Part number:
NTE477
Manufacturer:
NTE
File Size:
22.48 KB
Description:
Silicon npn transistor.
* D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V
NTE477
NTE
22.48 KB
Silicon npn transistor.
📁 Related Datasheet
NTE47 - Silicon NPN Transistor
(NTE)
NTE47 Silicon NPN Transistor High Gain, Low Noise Amp
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . .
NTE470 - Silicon NPN Transistor
(NTE)
NTE470 Silicon NPN Transistor RF Power Output
Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for appl.
NTE471 - Silicon NPN Transistor
(NTE)
NTE471 Silicon NPN Transistor RF Power Output PO = 100W @ 30MHz
Description: The NTE471 is a 28V epitaxial silicon NPN planar transistor designed prim.
NTE472 - Silicon NPN Transistor
(NTE)
NTE472 Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz
Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency.
NTE473 - Silicon NPN Transistor
(NTE)
NTE473 Silicon NPN Transistor RF Power Driver
Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and os.
NTE475 - Silicon NPN Transistor
(NTE)
NTE475 Silicon NPN Transistor RF Power Output
Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–a.
NTE476 - Silicon NPN Transistor
(NTE)
NTE476 Silicon NPN Transistor RF Power Output
Description: The NTE476 is a silicon epitaxial NPN–planar transistor which employs a multi–emitter elect.
NTE478 - Silicon NPN Transistor
(NTE)
NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz
Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor desig.
