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NTE477 - Silicon NPN Transistor

Description

The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.

Features

  • D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25°C.

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Datasheet Details

Part number NTE477
Manufacturer NTE Electronics (defunct)
File Size 22.48 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE477 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25°C Applications: 30 to 35 watts output power amplifiers in VHF band mobile radio applications. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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