D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D .

Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold .

The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and go.

NTE47

NTE470

NTE471

NTE472

NTE473

NTE475

NTE476

NTE478

NTE4000

NTE4001B

NTE4002B

NTE4006B

NTE4007