TIP120
Silicon NPN Transistor
Darlington Power Amp, Switch
TO−220 Type Package
Description:
The TIP120 is a silicon NPN Darlington transistor in a TO−220 type package designed for general
purpose amplifier and low−speed switching applications.
Features:
D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V (Min) at IC = 100mA
D
Low Collector−Emitter Saturation Voltage:
Low Collector−Emitter Saturation Voltage:
VVCCEE((ssaatt))
=
=
2.0V
4.0V
(Max)
(Max)
at
at
IICC
=
=
3A
5A
Absolute Maximum Ratings: (Note 1)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current,
Continuous
IC. .
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5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total
PDowerearteDiAsbsiopvaetio+n25(TCC
=
..
+25C),
.......
.P.D.
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. . . . 65W
0.52W/C
Total
PDowerearteDiAsbsiopvaetio+n25(TCA
= +25C),
.........
P. .D.
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. . . . . 2.0W
0.016W/C
Unclamped Inductive Load Energy (Note 2), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mJ
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. Stresses exceeding those listed in the Absolute Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be assumed, dam-
ages may occur and reliability may be affected.
Note 2. IC = 1A, L = 100mH, P.R.F. = 10Hz, VCC = 20V, RBE = 100.
