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NXP Semiconductors Electronic Components Datasheet

2N3866 Datasheet

Silicon planar epitaxial overlay transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427
Silicon planar epitaxial
overlay transistors
Product specification
Supersedes data of August 1986
File under Discrete Semiconductors, SC08a
1995 Oct 27


NXP Semiconductors Electronic Components Datasheet

2N3866 Datasheet

Silicon planar epitaxial overlay transistors

No Preview Available !

Philips Semiconductors
Silicon planar epitaxial
overlay transistors
Product specification
2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
APPLICATIONS
The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1
PIN DESCRIPTION
1 emitter
2 base
3 collector
handbook, halfpage
1
2
MBB199
3
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
VCER
VCEO
VEBO
IC
IC(AV)
PARAMETER
collector-emitter voltage
2N3866
2N4427
collector-emitter voltage
2N3866
2N4427
emitter-base voltage
2N3866
2N4427
collector current (DC)
average collector current
Ptot total power dissipation
fT transition frequency
Tj junction temperature
RF performance
TYPE NUMBER
2N3866
2N4427
f
(MHz)
400
175
CONDITIONS
RBE = 10
open base
open collector
measured over any 20 ms
period
up to Tmb = 25 °C
IC = 50 mA; VCE = 15 V;
f = 200 MHz
VCE
Po
(V) (W)
28 1
12 1
MIN.
MAX.
UNIT
55 V
40 V
30 V
20 V
3.5 V
2.0 V
0.4 A
0.4 A
3.5
500
W
MHz
200 °C
Gp
(dB)
>10
>10
η
(%)
>45
>50
1995 Oct 27
2


Part Number 2N3866
Description Silicon planar epitaxial overlay transistors
Maker NXP
PDF Download

2N3866 Datasheet PDF






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