* High terminal impedances for optimal broadband performance
* Improved linearized error vector magnitude with next generation signal
* Able to withstand extremely high output VSWR and broadband operating conditions
* Designed for low complexity linearization systems
A5G23H065N Datasheet (187.01 KB)
A5G23H065N
187.01 KB
Airfast rf power gan transistor.
A5G23H065N Airfast RF Power GaN Transistor Rev. 1 November 2022 This 8.8 W asymmetrical Doherty RF power GaN transistor is designed for cel.
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