A5G35H120N - Airfast RF Power GaN Transistor

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NXP

A5G35H120N Airfast RF Power GaN Transistor by NXP - Datasheet Preview — Datasheet preview – A5G35H120N

Datasheet Details

Part number	A5G35H120N
Manufacturer	NXP
File Size	402.47 KB
Description	Airfast RF Power GaN Transistor
Datasheet	A5G35H120N Datasheet
Additional preview pages of the A5G35H120N datasheet.

Product details

Description

This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz.

Features

High terminal impedances for optimal broadband performance.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Designed for low complexity linearization systems.
Optimized for massive MIMO active antenna systems for 5G base stations 3 Typical performance Table 1. 3500 MHz.
Typical Doherty single-carrier W-CDMA reference circuit performanc.

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Published: Aug 13, 2023 |