• Part: A5G35H120N
  • Description: Airfast RF Power GaN Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 402.47 KB
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Datasheet Summary

Airfast RF Power GaN Amplifier Rev. 3 - 18 October 2023 Product data sheet 1 General description This 18 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3800 MHz. This part is characterized and performance is guaranteed for applications operating in the 3300 to 3800 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 2 Features and benefits - High terminal impedances for optimal broadband performance - Improved linearized error vector magnitude with next...