• Part: A5G35S008N
  • Description: Airfast RF Power GaN Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 201.98 KB
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Datasheet Summary

Airfast RF Power GaN Transistor Rev. 2 - November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. 3500 MHz - Typical Single- Carrier W- CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3300 MHz - 41.0 3400 MHz - 41.0 3500 MHz - 42.3 3600 MHz - 43.6 3700 MHz - 44.5 3800 MHz - 44.8 1. All data measured in reference circuit with...