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A5G35S008N Datasheet Airfast Rf Power Gan Transistor

Manufacturer: NXP Semiconductors

Overview: A5G35S008N Airfast RF Power GaN Transistor Rev. 2 — November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. 3500 MHz • Typical Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3300 MHz 20.9 18.3 10.1 –41.0 3400 MHz 20.9 18.0 9.9 –41.0 3500 MHz 20.9 18.0 9.8 –42.3 3600 MHz 20.2 17.9 9.7 –43.6 3700 MHz 19.3 17.6 9.6 –44.5 3800 MHz 18.4 16.7 9.6 –44.8 1. All data measured in reference circuit with device soldered to printed circuit board.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Designed for low complexity linearization systems.
  • Universal broadband driver.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G35S008N 3300.
  • 3800 MHz, 27 dBm Avg. , 48 V.

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