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A5G38H045N Datasheet Airfast Rf Power Gan Transistor

Manufacturer: NXP Semiconductors

Overview: A5G38H045N Airfast RF Power GaN Transistor Rev. 1 — November 2022 This 5.4 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 4000 MHz. This part is characterized and performance is guaranteed for applications operating in the 3400 to 4000 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 3700–3980 MHz • Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 35 mA, VGSB = –4.2 Vdc, Pout = 5.4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) hD Output PAR ACPR (%) (dB) (dBc) 3700 MHz 3840 MHz 3980 MHz 15.5 52.0 14.9 50.8 14.2 50.3 8.0 –29.1 8.4 –30.7 8.7 –32.3 1. All data measured in reference circuit with device soldered to printed circuit board.

Key Features

  • High terminal impedances for optimal broadband performance.
  • Improved linearized error vector magnitude with next generation signal.
  • Able to withstand extremely high output VSWR and broadband operating conditions.
  • Designed for low complexity linearization systems.
  • Optimized for massive MIMO active antenna systems for 5G base stations Data Sheet: Technical Data A5G38H045N 3400.
  • 4000 MHz, 5.4 W Avg. , 48 V.

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