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AFT09MS015NT1 Datasheet RF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

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Overview

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz.

The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.

Narrowband Performance (12.5 Vdc, IDQ = 100 mA, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 870 (1) 17.2 77.0 16 Wideband Performance (12.5 Vdc, TA = 25C, CW) Frequency (MHz) Pin Gps D Pout (W) (dB) (%) (W) 136--174 0.38 16.0 60.0 15 350--470 760--870 (2) 0.23 18.5 60.0 16 0.32 16.8 52.3 15 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin Test (W) Voltage Result 870 (1) CW > 65:1 at all 0.5 Phase Angles (3 dB Overdrive) 17 No Device Degradation 1.

Key Features

  • Characterized for Operation from 136 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness.
  • High Linearity for: TETRA, SSB.
  • In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. Typical.

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