AFT09MS015NT1 Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in mobile radio equipment. Measured in 870 MHz narrowband test circuit.
AFT09MS015NT1 Key Features
- Characterized for Operation from 136 to 941 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband
- Full Power Across the Band
- Exceptional Thermal Performance
- Extreme Ruggedness
- High Linearity for: TETRA, SSB
- In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel