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AFT23S160W02GSR3 Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

Download the AFT23S160W02GSR3 datasheet PDF. This datasheet also includes the AFT23S160W02SR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AFT23S160W02SR3-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev.

0, 11/2013 RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

• Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Key Features

  • Designed for Wide Instantaneous Bandwidth.

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