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AFT23S160W02GSR3, AFT23S160W02SR3 Datasheet - NXP

AFT23S160W02GSR3 RF Power LDMOS Transistors

Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N Channel Enhancement Mode Lateral MOSFETs These 45 watt RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz. Typical Single Carrier W CDMA Performance: VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 Watts Avg., Input S.

AFT23S160W02GSR3 Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate

* Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

AFT23S160W02SR3-NXP.pdf

This datasheet PDF includes multiple part numbers: AFT23S160W02GSR3, AFT23S160W02SR3. Please refer to the document for exact specifications by model.
AFT23S160W02GSR3 Datasheet Preview Page 2 AFT23S160W02GSR3 Datasheet Preview Page 3

Datasheet Details

Part number:

AFT23S160W02GSR3, AFT23S160W02SR3

Manufacturer:

NXP ↗

File Size:

274.44 KB

Description:

Rf power ldmos transistors.

Note:

This datasheet PDF includes multiple part numbers: AFT23S160W02GSR3, AFT23S160W02SR3.
Please refer to the document for exact specifications by model.

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