* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate
* Source Voltage Range for Improved Class C Operation
* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
* Optimized for Doherty Applications
AFT23S160W02GSR3 Datasheet (274.44 KB)
AFT23S160W02GSR3
274.44 KB
Rf power ldmos transistors.
Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDMOS Transistors N Channel Enhancement
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