BF1100WR Datasheet - NXP

Dual-gate MOS-FET

BF1100WR Features

* Specially designed for use at 9 to 12 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

BF1100WR General Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an ant.

BF1100WR Datasheet (146.39 KB)

BF1100WR Datasheet Preview — Preview of BF1100WR PDF

Datasheet Details

Part number:

BF1100WR

Manufacturer:

NXP ↗

File Size:

146.39 KB

Description:

Dual-gate mos-fet.
DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Sem.

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BF1100WR Dual-gate MOS-FET NXP

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BF1100WR Features

BF1100WR General Description

Datasheet Details

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