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NXP Semiconductors Electronic Components Datasheet

BF1101 Datasheet

N-channel dual-gate MOS-FETs

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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14


NXP Semiconductors Electronic Components Datasheet

BF1101 Datasheet

N-channel dual-gate MOS-FETs

No Preview Available !

Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1101 marking code: NDp.
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1101R marking code: NCp.
Fig.2 Simplified outline
(SOT143R).
fpage
3
4
2
Top view
1
MSB842
BF1101WR marking code: NC.
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
Xmod
Tj
PARAMETER
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
CONDITIONS
f = 1 MHz
f = 800 MHz
input level for k = 1% at
40 dB AGC
MIN.
25
100
TYP.
30
2.2
25
1.7
MAX.
7
30
200
2.7
35
2.5
UNIT
V
mA
mW
mS
pF
fF
dB
dBµV
− − 150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2


Part Number BF1101
Description N-channel dual-gate MOS-FETs
Maker NXP
Total Page 16 Pages
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