BF1102R Dual N-channel dual gate MOS-FETs

Philips

Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product speciﬁcation Supersedes data of 19.
PIN BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and.

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Datasheet Specifications

Part number: BF1102R
Manufacturer: Philips
File Size: 122.14 KB
Datasheet: BF1102R-Philips.pdf
Description: Dual N-channel dual gate MOS-FETs

Features

* Two low noise gain controlled amplifiers in a single package

Applications

* Superior cross-modulation performance during AGC
* High forward transfer admittance
* High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional commun

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