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BF1102R - Dual N-channel dual gate MOS-FETs

Datasheet Summary

Description

PIN BF1102 BF1102R 1 gate 1 (1) gate 1 (1) 2 gate 2 (1 and 2) source (1 and 2) 3 drain (1) drain (1) 4 drain (2) drain (2) 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) handbook, halfpage g2 (1, 2) DESCRIPTION The BF1102 and BF1102R are both two equal dual gate MOS-FETs

Features

  • Two low noise gain controlled amplifiers in a single package.
  • Specially designed for 5 V.

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Datasheet Details

Part number BF1102R
Manufacturer Philips
File Size 122.14 KB
Description Dual N-channel dual gate MOS-FETs
Datasheet download datasheet BF1102R Datasheet
Additional preview pages of the BF1102R datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Dual N-channel dual gate MOS-FETs Product specification BF1102; BF1102R FEATURES • Two low noise gain controlled amplifiers in a single package • Specially designed for 5 V applications • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
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