* Two low noise gain controlled amplifiers in a single package
* Specially designed for 5 V applications
* Superior cross-modulation performance during AGC
* High forward transfer admittance
* High forward transfer admittance to input capacitance ratio. APPLIC
BF1102R
Philips
122.14 KB
Dual n-channel dual gate mos-fets.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BF1102; BF1102R Dual N-channel dual gate MOS-FETs
Product specification Supersedes data of 19.
📁 Related Datasheet
BF1102 - Dual N-channel dual gate MOS-FET
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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102 Dual N-channel dual gate MOS-FET
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BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs
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(NXP)
DISCRETE SEMICONDUCTORS
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BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs
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BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs
Product specification Supersedes data of 1999 Feb 01 1999 M.
BF1105 - N-channel dual-gate MOS-FETs
(NXP)
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DATA SHEET
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Product specification Supersedes data of 1997 Dec 01
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