Datasheet4U.com

BF1100WR - Dual-gate MOS-FET

Product Overview

NXP

📥 Download Datasheet

BF1100WR Dual-gate MOS-FET by NXP - Datasheet Preview — Datasheet preview – BF1100WR

Datasheet Details

Part number	BF1100WR
Manufacturer	NXP
File Size	146.39 KB
Description	Dual-gate MOS-FET
Datasheet	BF1100WR Datasheet
Additional preview pages of the BF1100WR datasheet.

Product details

Description

Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

Features

Specially designed for use at 9 to 12 V supply voltage.
Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Superior cross-modulation performance during AGC.

📁 Similar Datasheet

BF1102R - Dual N-channel dual gate MOS-FETs (Philips)
BF115 - 2.0mm Pitch Socket (Global Connector Technology)
BF117 - NPN SIlicon Transistors (ETC)
BF118 - NPN SIlicon Transistors (ETC)
BF119 - NPN SIlicon Transistors (ETC)
BF1005 - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)
BF1005R - Silicon N-Channel MOSFET Tetrode (Infineon Technologies AG)
BF1005S - Silicon N-Channel MOSFET Tetrode (Siemens Semiconductor Group)

Other Datasheets by NXP

BF1100 - Dual-gate MOS-FETs
BF1100R - Dual-gate MOS-FETs
BF1101 - N-channel dual-gate MOS-FETs
BF1101R - N-channel dual-gate MOS-FETs
BF1101WR - N-channel dual-gate MOS-FETs
BF1102 - Dual N-channel dual gate MOS-FET

Published: Mar 23, 2005 |