Part number:
BF1100WR
Manufacturer:
File Size:
146.39 KB
Description:
Dual-gate mos-fet.
BF1100WR_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BF1100WR
Manufacturer:
File Size:
146.39 KB
Description:
Dual-gate mos-fet.
BF1100WR, Dual-gate MOS-FET
Enhancement type field-effect transistor in a plastic microminiature SOT343R package.
The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an ant
BF1100WR Features
* Specially designed for use at 9 to 12 V supply voltage
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz
* Superior cross-modulation performance during AGC. APPLICATIONS
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