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BF1100WR Datasheet - NXP

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BF1100WR Dual-gate MOS-FET

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Sem.
Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

BF1100WR_PhilipsSemiconductors.pdf

Preview of BF1100WR PDF

Datasheet Details

Part number:

BF1100WR

Manufacturer:

NXP ↗

File Size:

146.39 KB

Description:

Dual-gate MOS-FET

Features

* Specially designed for use at 9 to 12 V supply voltage
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz

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