BF1100WR Dual-gate MOS-FET

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BF1100WR Dual-gate MOS-FET Product speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Sem.
Enhancement type field-effect transistor in a plastic microminiature SOT343R package.

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Datasheet Specifications

Part number: BF1100WR
Manufacturer: NXP ↗
File Size: 146.39 KB
Datasheet: BF1100WR_PhilipsSemiconductors.pdf
Description: Dual-gate MOS-FET

Features

* Specially designed for use at 9 to 12 V supply voltage
* Short channel transistor with high forward transfer admittance to input capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz

BF1100WR Distributors

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BF1100WR Dual-gate MOS-FET NXP

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