BF1100WR Datasheet, Mos-fet, NXP

BF1100WR Features

• Mos-fet
• Specially designed for use at 9 to 12 V supply voltage
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise

PDF File Details

Part number:

BF1100WR

Manufacturer:

NXP ↗

File Size:

146.39kb

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📄 Datasheet

Description:

Dual-gate mos-fet. Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET

BF1100WR Application

• Applications
• VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type fi

TAGS

BF1100WR

NXP

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