BF1100WR Datasheet - NXP

BF1100WR Dual-gate MOS-FET

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an ant.

BF1100WR Features

* Specially designed for use at 9 to 12 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS

BF1100WR_PhilipsSemiconductors.pdf