* Two low noise gain controlled amplifiers in a single package
* Specially designed for 5 V applications
* Superior cross-modulation performance during AGC
* High forward transfer admittance
* High forward transfer admittance to input capacitance ratio. APPLIC
BF1102
154.37 KB
Dual n-channel dual gate mos-fet.
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
MBD128
BF1102 Dual N-channel dual gate MOS-FET
Preliminary specification 1999 Jul 08
Philips Semi.
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