BF1102 Datasheet - NXP

BF1102 Dual N-channel dual gate MOS-FET

The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and .

BF1102 Features

* Two low noise gain controlled amplifiers in a single package

* Specially designed for 5 V applications

* Superior cross-modulation performance during AGC

* High forward transfer admittance

* High forward transfer admittance to input capacitance ratio. APPLIC

BF1102 Datasheet (154.37 KB)