BF1102 Dual N-channel dual gate MOS-FET

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semi.
The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads.

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Datasheet Specifications

Part number: BF1102
Manufacturer: NXP ↗
File Size: 154.37 KB
Datasheet: BF1102_PhilipsSemiconductors.pdf
Description: Dual N-channel dual gate MOS-FET

Features

* Two low noise gain controlled amplifiers in a single package

Applications

* Superior cross-modulation performance during AGC
* High forward transfer admittance
* High forward transfer admittance to input capacitance ratio. APPLICATIONS
* Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professio

BF1102 Distributors

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BF1102 Dual N-channel dual gate MOS-FET NXP

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