BF1100R Datasheet (NXP) - Dual-gate MOS-FETs

BF1100R, Dual-gate MOS-FETs

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.

The transistor consists of an amplifier MOS-FET with source BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

CAUTION The d

BF1100R Features

* Specially designed for use at 9 to 12 V supply voltage

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz

* Superior cross-modulation performance during AGC. APPLICATIONS